Photodeceptive device based on heteroepitaxial structure GaSb/InGaAsSb
V. V. Gavrushko,
A. N. Grigor'ev,
A. A. Sapozhnikov,
V. A. Karachinov,
N. E. Karachinov,
V. M. Petrov https://doi.org/10.34680/2076-8052.2023.5(134).639-646
Abstract
The article provides information on the structure of an uncooled photodetector based on an InGaAsSb compound for the spectral range of 1.7...2.3 microns. The data on the integral sensitivity and also the spectral, noise, and threshold characteristics of the photodetector in the temperature range of 223-323 K are presented. The detectivity at room temperature reached the values D*(λmax,1000.1)=9.4.1010 W-1.cm.Hz1/2. The dynamic range was 64 dB.
About the Authors
V. V. Gavrushko
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Veliky Novgorod
A. N. Grigor'ev
Industrial Throttles LLC
Russian Federation
Russian Federation
Veliky Novgorod
A. A. Sapozhnikov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Veliky Novgorod
V. A. Karachinov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Veliky Novgorod
N. E. Karachinov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Veliky Novgorod
V. M. Petrov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Veliky Novgorod
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Review
For citations:
Gavrushko V.V., Grigor'ev A.N., Sapozhnikov A.A., Karachinov V.A., Karachinov N.E., Petrov V.M. Photodeceptive device based on heteroepitaxial structure GaSb/InGaAsSb. Title in english. 2023;(5(134)):639-646. (In Russ.) https://doi.org/10.34680/2076-8052.2023.5(134).639-646
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