For citations:
Gavrushko V.V., Grigor'ev A.N., Sapozhnikov A.A., Karachinov V.A., Karachinov N.E., Petrov V.M. Photodeceptive device based on heteroepitaxial structure GaSb/InGaAsSb. Title in english. 2023;(5(134)):639-646. (In Russ.) https://doi.org/10.34680/2076-8052.2023.5(134).639-646
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