Оptical scatterometry application for in-line control of geometric parameters of photoresist masks
https://doi.org/10.34680/2076-8052.2023.1(130).80-87
Abstract
The methods of photolithography process control are of particular importance in modern microelectronics. In technological processes with design rules of 130 nm or less, photoresist masks often become three-dimensional. The traditionally used method for controlling critical dimensions, that is scanning electron microscopy, does not always meet the precision requirements for monitoring such structures due to the shrinkage effect of ArF-resist. Moreover, the control of the processes of manufacturing photoresist mask elements should imply measurements of its full profile (lateral and vertical sizes, sidewall angle, etc.). In this paper, the method of optical scatterometry is considered as a tool for controlling the geometric parameters of a periodic photoresist mask. A comparative analysis of the critical size measurement results obtained by scatterometry and scanning electron microscopy is presented. The potential for application of optical scatterometry for photolithography process in-line control was assessed.
About the Authors
I. V. Nelyubin
NM-Tech LLC; National Research University of Electronic Technology (MIET)
Russian Federation
Russian Federation
Nelyubin I. V.,
Zelenograd.
A. D. Volokhovsky
NM-Tech LLC
Russian Federation
Russian Federation
Volokhovsky A. D.,
Zelenograd
M. G. Putrya
National Research University of Electronic Technology (MIET)
Russian Federation
Russian Federation
Putrya M. G.,
Zelenograd.
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Review
For citations:
Nelyubin I.V., Volokhovsky A.D., Putrya M.G. Оptical scatterometry application for in-line control of geometric parameters of photoresist masks. Title in english. 2023;(1(130)):80-87. (In Russ.) https://doi.org/10.34680/2076-8052.2023.1(130).80-87
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