For citations:

Fedorov D.G., Bochenkov G.M., Zhelannov A.V., Seleznev B.I. Application of ionic implantation of argon for forming inter-device insulation in AlGaN/AlN/GaN HEMT-structures. Title in english. 2021;(4(125)):60-63. (In Russ.) https://doi.org/10.34680/2076-8052.2021.4(125).60-63