For citations:

Bochenkov G.M., Fedorov D.G., Zhelannov A.V., Seleznev B.I. Formation of inter-device isolation in gallium nitride heterostructures on silicon. Title in english. 2023;(1(130)):22-33. (In Russ.) https://doi.org/10.34680/2076-8052.2023.1(130).22-33