Method for increasing the threshold voltage of silicon DMOS transistors
https://doi.org/10.34680/2076-8052.2021.4(125).15-18
Abstract
The effect of the impurity concentration in the substrate and the type of dopant in a polysilicon gate on the threshold voltage of silicon DMOS transistors with an induced n-channel has been investigated. It is shown that an increase in the average impurity concentration in the substrate by 50% makes it possible to increase the threshold voltage of the transistor by more than 30%. However, at the same time, an increase in the resistance of the transistor channel is observed, which entails a decrease in the drain current by about 25%. The influence of the conductivity type of the polysilicon gate on the threshold voltage of the transistor has been determined. It is shown that replacing phosphorus with boron when doping a polysilicon gate allows increasing the threshold voltage by about 25%. In this case, the drain current of the transistors does not change, which may be of practical interest in the development of noise-immune switches based on field-effect transistors.
About the Authors
V. V. Gavrushko
Новгородский государственный университет имени Ярослава Мудрого
Russian Federation
Russian Federation
V. A. Lastkin
ОАО «ОКБ-Планета»
Russian Federation
Russian Federation
Т. A. Firsova
ОАО «ОКБ-Планета»
Russian Federation
Russian Federation
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Review
For citations:
Gavrushko V.V., Lastkin V.A., Firsova Т.A. Method for increasing the threshold voltage of silicon DMOS transistors. Title in english. 2021;(4(125)):15-18. (In Russ.) https://doi.org/10.34680/2076-8052.2021.4(125).15-18
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