Application of ionic implantation of argon for forming inter-device insulation in AlGaN/AlN/GaN HEMT-structures
https://doi.org/10.34680/2076-8052.2021.4(125).60-63
Abstract
A technological cycle of the formation of inter-device insulation on a heteroepitaxial AlGaN/AlN/GaN structure grown on a silicon substrate using the technology of ion implantation and mesa etching is considered. The Ar++ profile in the AlGaN/AlN/GaN heteroepitaxial structure has been calculated, and the distribution of defects in the heteroepitaxial structure has been obtained using the TRIM program. The distribution of argon in heteroepitaxial layers of AlGaN/AlN/GaN after ion implantation is presented. It has been determined that to ensure reliable insulation by ion implantation, it is necessary to use double ionized argon with an energy of 125 keV. The resistance of the inter-device insulation formed by ion implantation and mesa etching has been measured. The dependence of the inter-device insulation resistance on the dose of the introduced argon impurity has been obtained. It is shown that the use of ion implantation technology is promising for creating inter-device insulation on AlGaN/AlN/GaN.
About the Authors
D. G. Fedorov
ОАО «ОКБ-Планета»
Russian Federation
Russian Federation
G. M. Bochenkov
ОАО «ОКБ-Планета»;
Новгородский государственный университет имени Ярослава Мудрого
Russian Federation
Russian Federation
A. V. Zhelannov
ОАО «ОКБ-Планета»
Russian Federation
Russian Federation
B. I. Seleznev
Новгородский государственный университет имени Ярослава Мудрого
Russian Federation
Russian Federation
References
1. Chiu H., Chen C., Kao H. et al. Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis. Microelectronics Reliability, 2013, vol. 53, pp. 1897- 1900. doi: https://doi.org/10.1016/j.microrel.2013.06.015
2. Werquin M., Vellas N., Guhel Y., Ducatteau D., Bou-dart B., Germain M. First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant isolation technology. Microw. Opt. Technol. Lett., 2005, vol. 46, no. 4, pp. 311- 315. doi: https://doi.org/10.1002/mop.20974
3. Kasai H., Ogawa H., Nishimura T. et al. Nitrogen ion implantation isolation technology for normally-off GaN MISFETs on p-GaN substrate. Phys. Status Solidi C., 2014, vol. 11 (3- 4), pp. 914-917. doi: https://doi.org/10.1002/pssc.201300436
4. Taube A., Kaminska E., Kozubal M. et al. Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al. Phys. Status Solidi A, 2015, vol. 212, no. 5, pp. 1162-1169.
5. Niketa S., Sandeep K. D., Nidhi C. Refined isolation techniques for GaN-based high electron mobility transistors. Materials Science in Semiconductor Processing, 2018, vol. 87, pp. 195-201. doi: https://doi.org/10.1016/j.mssp.2018.05.015
6. Zhelannov A.V., Ionov A.S., Seleznev B.I., Fedorov D.G. Omicheskiye kontakty k pribornym strukturam na osnove nitrida galliya [Ohmic contacts to device structures based on gallium nitride]. Fizika i tekhnika poluprovodnikov — Physics and Technology of Semiconductors, 2020, vol. 54, no. 3, pp. 246-250. doi: https://doi.org/10.21883/FTP.2020.03.49028.9224
7. Interactions of ions with matter. Available at: http://srim.org/. (accessed 12.10.2021)
Review
For citations:
Fedorov D.G., Bochenkov G.M., Zhelannov A.V., Seleznev B.I. Application of ionic implantation of argon for forming inter-device insulation in AlGaN/AlN/GaN HEMT-structures. Title in english. 2021;(4(125)):60-63. (In Russ.) https://doi.org/10.34680/2076-8052.2021.4(125).60-63
Views:
53
Email this article 