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Development of compact model of an integral resistor

https://doi.org/10.34680/2076-8052.2021.4(125).52-56

Abstract

The article discusses a technique for forming a compact (SPICE) model of an integral resistor manufactured using bipolar technology on the base layer of a transistor. Unlike a discrete analog, an integral resistor is characterized by many parameters, which is associated with the nonlinear temperature dependence of its nominal value and the presence of parasitic elements in the form of a barrier capacitance. The process of forming a macromodel of an integrated resistor involves the extraction of five parameters: linear and quadratic temperature coefficients and three parameters necessary to describe the depletion layer capacitance. Based on the obtained model, the calculation of the temperature and amplitude-frequency characteristics of the integral resistor has been carried out. The proposed procedure for synthesizing the integral resistor model can be used to form macromodels of other types of integral resistors: low-resistance, formed on the emitter layer, and high-resistance — pinch resistors.

About the Authors

M. N. Petrov
Новгородский государственный университет имени Ярослава Мудрого
Russian Federation


I. S. Telina
Новгородский государственный университет имени Ярослава Мудрого
Russian Federation


References

1. Compact Modeling. Principles, Techniques, and Applications. Ed. G. Gildenblat. New York: Springer Science+Business Media B.V, 2010. 546 p.

2. Petrov M.N., Gudkov G.V. Modelirovaniye komponentov i elementov integralnykh skhem: Uchebnoye posobiye [Modeling Components and Elements of Integrated Circuits: Textbook]. Saint Petersburg, Lan Publ., 2021. 464 p.


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For citations:


Petrov M.N., Telina I.S. Development of compact model of an integral resistor. Title in english. 2021;(4(125)):52-56. (In Russ.) https://doi.org/10.34680/2076-8052.2021.4(125).52-56

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ISSN 2076-8052 (Print)