Theory of the electronic structure of semiconductor solid solutions of isovalent substitution
https://doi.org/10.34680/2076-8052.2023.1(130).47-57
Abstract
The work is devoted to the application of the generalized Lifshitz model and the theory of deformation potential to the analytical study of the energy spectrum of solid solutions of isovalent substitution of A3B5 semiconductor compounds. The theory takes into account the difference between the intrinsic potentials of the substituting and substituted atoms, as well as the deformation of the crystal lattice due to the difference in the atomic sizes of the impurity and substituted atoms. The main deformation effects in substitutional solid solutions have been considered and the choice of the zero approximation (zero approximation crystal model) has been discussed. Within the framework of the Green function method, a self-consistent method for calculating the band gap of a solution Al 𝑐𝑐1 (1)Ga 𝑐𝑐2 (1) In 1−𝑐𝑐1 (1) −𝑐𝑐2 (1)P 𝑐𝑐1 (2)As 𝑐𝑐2 (2)Sb 1−𝑐𝑐1 (2) −𝑐𝑐2 (2) is presented in a wide range of compositions, numerical modeling of energy gaps and deformation potentials has been carried out. The prospects of further development of the theory have been considered.
About the Authors
A. Yu. Zakharov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Zakharov A. Yu.,
Veliky Novgorod.
M. A. Zakharov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Zakharov M. A.,
Veliky Novgorod.
A. E. Kazakov
Yaroslav-the-Wise Novgorod State University
Russian Federation
Russian Federation
Kazakov A. E.,
Veliky Novgorod.
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Review
For citations:
Zakharov A.Yu., Zakharov M.A., Kazakov A.E. Theory of the electronic structure of semiconductor solid solutions of isovalent substitution. Title in english. 2023;(1(130)):47-57. (In Russ.) https://doi.org/10.34680/2076-8052.2023.1(130).47-57
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