Integrated microwave phemt transistor based on GaAs X and Ku band heterostructures
https://doi.org/10.34680/2076-8052.2022.3(128).84-90
Abstract
The technological cycle of manufacturing an active element of a pHEMT transistor with a gate length of 0.25 μm as part of a microwave monolithic integrated circuit based on gallium arsenide is considered. The main area of application of this technology is the design of monolithic integration circuits with operating frequencies up to the Ku-band (18 GHz). The requirements for the level of the main parameters of the integrated pHEMT transistor have been developed. As the initial heterostructure, we chose a pHEMT structure with two-sided filling of the channel with electrons that is a DpHEMT structure providing low noise figure and a high level of specific output microwave power. The methods of forming the metallization of a T-shaped gate, which improve the adhesion of a passivating SiO2 film deposited later, have been considered. An analysis of the structures of the gate grooves of microwave pHEMT transistors has been carried out. The structure of low-temperature SiO2 films obtained by chemical vapor deposition has been studied by Fourier-transform infrared spectroscopy. Photon annealing was used to eliminate the oxygen deficiency in the films. Ohmic contacts on the plate were created using lift-off lithography after the process of vacuum deposition of the required AuGe/Mo/Au/Mo metal system. This metallization system, which includes Mo, in contrast to systems based on Ni, has several advantages. The developed transistors for microwave monolithic integrated circuits of low-noise amplifiers and Ku-band power amplifiers satisfy the required level of the main parameters of the integral pHEMT gallium arsenide transistor.
About the Authors
M. V. Dragut
АО «ОКБ-Планета»; Новгородский государственный университет имени Ярослава Мудрого
Russian Federation
Russian Federation
B. I. Seleznev
Новгородский государственный университет имени Ярослава Мудрого
Russian Federation
Russian Federation
References
1. Babak L.I., Cherkashin M.V., Sheyerman F.I., et al. Razrabotka GaAs i SiGe SVCh monolitnykh integralnykh skhem [Development of GaAs and SiGe microwave monolithic integrated circuits, element libraries and CAD modules at Tomsk University of Control Systems and Radioelectronics]. Elektronnaya tekhnika. Ser. 3: Mikroelektronika, 2015, no. 4(160), pp. 4–17.
2. Kondratenko A. Razrabotka GaAs mHEMT MIS MShU Ku diapazona chastot na osnove tekhnologicheskogo protsessa kompanii OMMIC [Kondratenko A. Development of GaAs mHEMT MIC LNA Ku-band frequencies based on the technological process of the company OMMIC]. Sovremennaya elektronika, 2018, no. 3, pp. 64–65.
3. Sukhanov D.A. Modernizatsiya proizvodstva SVCh MIS [Modernization of the production of microwave MIC]. Nanoidustriya — Nanoindustry, 2019, no. 89, pp. 450–452.
4. Lapin V. G. Perspektivy razvitiya i primeneniya DA-pHEMT v SVCh MIS [Prospects for development and application DA-pHEMT in microwave MIS]. Elektronnaya tekhnika. Ser. 1: SVC-tekhnika, 2017, no. 1(532), pp. 26–44.
5. Lukashin V.M., Pashkovskiy A.B., Zhuravlev K.S., et al. Perspektivy razvitiya moshchnykh polevykh tranzistorov na geterostrukturakh s donorno-aktseptornym legirovaniyem [Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping]. FTP — Semiconductors, 2014, no. 5(48), pp. 684–692.
6. Anishchenko E.V., Erofeev Е.V., Ishutkin S.V., et al. The formation of multilayer resist mask for transistor T-gates fabrication using electron-beam lithography. Proc. of the International Conference of Micro/Nanotechnologies and Electron Devices (EDM), 2011, pp. 146–149. doi: https://doi.org/10.1109/EDM.2011.6006918
7. Seleznev B.I., Moskalev G.Ya., Fedorov D.G. Fotonnyy otzhig implantirovannykh kremniyem sloyev nitrida galliya [Photon annealing of silicon-implanted layers of gallium nitride]. FTP — Semiconductors, 2016, no. 6(50), pp. 848–853.
8. Sandsa T., Keramidas V.G., Yu A.J., et al. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies. J. Mater. Res., 1987, vol. 2, no. 2, pp. 262–275. doi: https://doi.org/10.1557/JMR.1987.0262
9. Kargin N.I., Kuznetsov A.L., Seidman L.A., et al. Formirovaniye omicheskikh kontaktov v tranzistore s vysokoy podvizhnostyu elektronov s metamorfnym geteroperekhodom na osnove arsenida galliya [Formation of ohmic contacts in a transistor with high electron mobility with a metamorphic heterojunction based on gallium arsenide]. Elektronnaya tekhnika. Ser. 2: Poluprovodnikovyye pribory, 2014, no. 1(232), pp. 75–84.
10. Voropayev K.O., Seleznev B.I., Ionov A.S., Petrov A.V. Omicheskiye kontakty dlya vertikalno-izluchayushchikh lazerov s vnutrirezonatornymi kontaktami na osnove geteroepitaksialnykh struktur arsenida galliya [Ohmic contacts for vertically emitting lasers with intracavity contacts based on gallium arsenide heteroepitaxial structures]. Vestnik NovSU. Issue: Engineering Sciences, 2017, no. 6(104), pp. 13–16.
Review
For citations:
Dragut M.V., Seleznev B.I. Integrated microwave phemt transistor based on GaAs X and Ku band heterostructures. Title in english. 2022;(3(128)):84-90. (In Russ.) https://doi.org/10.34680/2076-8052.2022.3(128).84-90
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