For citations:
Dragut M.V., Seleznev B.I. Integrated microwave phemt transistor based on GaAs X and Ku band heterostructures. Title in english. 2022;(3(128)):84-90. (In Russ.) https://doi.org/10.34680/2076-8052.2022.3(128).84-90
Dragut M.V., Seleznev B.I. Integrated microwave phemt transistor based on GaAs X and Ku band heterostructures. Title in english. 2022;(3(128)):84-90. (In Russ.) https://doi.org/10.34680/2076-8052.2022.3(128).84-90