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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">vestnovsu</journal-id><journal-title-group><journal-title xml:lang="ru">Вестник Новгородского государственного университета</journal-title><trans-title-group xml:lang="en"><trans-title>Vestnik of Novgorod State University</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2076-8052</issn><publisher><publisher-name>Новгородский государственный университет имени Ярослава Мудрого</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.34680/2076-8052.2023.3(132).365-373</article-id><article-id custom-type="elpub" pub-id-type="custom">vestnovsu-228</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Электроника</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Electronics</subject></subj-group></article-categories><title-group><article-title>Конкурирующие механизмы роста  при формировании поликристаллической пленки MAPbI3</article-title><trans-title-group xml:lang="en"><trans-title>Competing growth mechanisms during  the formation of a MAPbI3 polycrystalline film</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9626-7612</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Рябко</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Ryabko</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Рябко Андрей Андреевич – кандидат технических наук, младший научный сотрудник,</p><p>Санкт-Петербург.</p></bio><bio xml:lang="en"><p>Saint Petersburg.</p></bio><email xlink:type="simple">a.a.ryabko93@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0009-6273-1478</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Овезов</surname><given-names>М. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Ovezov</surname><given-names>M. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Овезов Максат Кемалович – магистр, младший научный сотрудник,</p><p>Санкт-Петербург.</p></bio><bio xml:lang="en"><p>Saint Petersburg.</p></bio><email xlink:type="simple">strontiumx94@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0195-8870</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Максимов</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Maksimov</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Максимов Александр Иванович – кандидат физико-математических наук, доцент,</p><p>Санкт-Петербург.</p></bio><bio xml:lang="en"><p>Saint Petersburg.</p></bio><email xlink:type="simple">aimaximov@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5449-4446</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Алешин</surname><given-names>А. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Aleshin</surname><given-names>A. N.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алешин Андрей Николаевич – доктор физико-математических наук, доцент,</p><p>Санкт-Петербург.</p></bio><bio xml:lang="en"><p>Saint Petersburg.</p></bio><email xlink:type="simple">aleshin.transport@mail.ioffe.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6500-5492</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мошников</surname><given-names>В. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Moshnikov</surname><given-names>V. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мошников Вячеслав Алексеевич – доктор физико-математических наук, профессор,</p><p>Санкт-Петербург.</p></bio><bio xml:lang="en"><p>Saint Petersburg.</p></bio><email xlink:type="simple">vamoshnikov@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Физико-технический институт имени А. Ф. Иоффе Российской академии наук</institution><country>Россия</country></aff><aff xml:lang="en"><institution>The Ioffe Physical-Technical Institute of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» имени В. И. Ульянова (Ленина)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Saint Petersburg Electrotechnical University "LETI"</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>26</day><month>09</month><year>2023</year></pub-date><volume>0</volume><issue>3(132)</issue><fpage>365</fpage><lpage>373</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Рябко А.А., Овезов М.К., Максимов А.И., Алешин А.Н., Мошников В.А., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Рябко А.А., Овезов М.К., Максимов А.И., Алешин А.Н., Мошников В.А.</copyright-holder><copyright-holder xml:lang="en">Ryabko A.A., Ovezov M.K., Maksimov A.I., Aleshin A.N., Moshnikov V.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestnovsu.elpub.ru/jour/article/view/228">https://vestnovsu.elpub.ru/jour/article/view/228</self-uri><abstract><p>Представлены результаты исследования тонких поликристаллическихи перовскитных слоев CH3NH3PbI3 (MAPbI3). Полученные слои MAPbI3 обладают характерным спектром поглощения, оптической шириной запрещенной зоны и фотооткликом на облучение в видимой области спектра. Обнаружено два механизма кристаллизации в слое MAPbI3 в процессе нагрева, обеспечивающие формирование пленки из кристаллитов с характерными размерами 100–200 нм и удлиненных дендритных структур с размерами более 50 мкм. Транспорт в исследованных пленках описывается моделью токов, ограниченных пространственным зарядом, при наличии гистерезиса вольт-амперных характеристик, обусловленного миграцией ионов.</p></abstract><trans-abstract xml:lang="en"><p>The results of studying thin polycrystalline perovskite layers of CH3NH3PbI3 (MAPbI3) are presented. The resulting MAPbI3 layers demonstrate a characteristic absorption spectrum, optical band gap, and photoresponse to irradiation in the visible region of the spectrum. Two crystallization mechanisms have been found in the MAPbI3 layer during heating, which ensure the formation of a film of crystallites with characteristic sizes of 100–200 nm and long dendritic structures with a length of more than 50 μm. A space-charge-limited current regime has been registered, as well as hysteresis due to ion migration.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>перовскит</kwd><kwd>металлоорганический</kwd><kwd>гибридный</kwd><kwd>MAPbI3</kwd><kwd>центрифугирование</kwd><kwd>механизмы кристаллизации</kwd><kwd>дендриты</kwd></kwd-group><kwd-group xml:lang="en"><kwd>perovskite</kwd><kwd>metallo-organic</kwd><kwd>hybrid</kwd><kwd>MAPbI3</kwd><kwd>centrifugation</kwd><kwd>crystallization mechanisms</kwd><kwd>dendrites</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследование выполнено за счет гранта Российского научного фонда № 23- 42-10029, https://rscf.ru/project/23-42-10029/.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Lian Z., Yan Q., Gao T., Ding J., Lv Q., Ning C., Li Q., Sun J.-L. 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