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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">vestnovsu</journal-id><journal-title-group><journal-title xml:lang="ru">Вестник Новгородского государственного университета</journal-title><trans-title-group xml:lang="en"><trans-title>Vestnik of Novgorod State University</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2076-8052</issn><publisher><publisher-name>Новгородский государственный университет имени Ярослава Мудрого</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.34680/2076-8052.2021.2(123).39-42</article-id><article-id custom-type="elpub" pub-id-type="custom">vestnovsu-175</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Электроника</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Electronics</subject></subj-group></article-categories><title-group><article-title>Исследование продольной и толщинной мод магнитоэлектрического эффекта в магнитострикционно-пьезоэлектрической двухслойной структуре Метглас/карбид кремния</article-title><trans-title-group xml:lang="en"><trans-title>Exploratory development of the longitudinal and thickness modes of the magnetoelectric effect in a magnetostrictive-piezoelectric two-layer structure Metglas/silicon carbide</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Соколов</surname><given-names>О. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Sokolov</surname><given-names>O. V.</given-names></name></name-alternatives><email xlink:type="simple">o-v-sokolov@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Иванов</surname><given-names>С. Н.</given-names></name><name name-style="western" xml:lang="en"><surname>Ivanov</surname><given-names>S. N.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Петров</surname><given-names>Д. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Petrov</surname><given-names>D. A.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бичурин</surname><given-names>М. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Bichurin</surname><given-names>M. I.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Новгородский государственный университет имени Ярослава Мудрого</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2021</year></pub-date><pub-date pub-type="epub"><day>22</day><month>09</month><year>2023</year></pub-date><volume>0</volume><issue>2(123)</issue><fpage>39</fpage><lpage>42</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Соколов О.В., Иванов С.Н., Петров Д.А., Бичурин М.И., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Соколов О.В., Иванов С.Н., Петров Д.А., Бичурин М.И.</copyright-holder><copyright-holder xml:lang="en">Sokolov O.V., Ivanov S.N., Petrov D.A., Bichurin M.I.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestnovsu.elpub.ru/jour/article/view/175">https://vestnovsu.elpub.ru/jour/article/view/175</self-uri><abstract><p>Представлены результаты исследования продольной и толщинной мод в области электромеханического резонанса в магнитоэлектрической композитной структуре. Были теоретически исследованы магнитоэлектрические структуры состава Метглас / 4H-SiC и Метглас / 6H-SiC. При получении теоретических результатов были использованы материальные параметры составляющих фаз композитных структур. Проведено сравнение расчетных характеристик для двух различных политипов карбида кремния 4H-SiC и 6H-SiC. Выяснено, что величина резонансного магнитоэлектрического коэффициента в структуре Метглас / 6H-SiC больше, чем в структуре Метглас / 4H-SiC как для продольной, так и для толщинной моды. Полученные результаты можно использовать в дальнейшем при проектировании активных полупроводниковых устройств, основанных на МЭ эффекте.</p></abstract><trans-abstract xml:lang="en"><p>This article presents the results of a study of the longitudinal and thickness modes in the field of electromechanical resonance in a magnetoelectric composite structure. Magnetoelectric structures of the composition Metglas/4H-SiC and Metglas/6H-SiC were theoretically explored. When obtaining theoretical results, the material parameters of the constituent phases of the composite structures were used. The calculated characteristics are compared for two different polytypes of silicon carbide 4H-SiC and 6H-SiC. It was found that the value of the resonance magnetoelectric coefficient in the Metglas/6H-SiC structure is higher than in the Metglas/4H-SiC structure for both the longitudinal and the thickness modes. The results obtained can be used in the future in the design of active semiconductor devices based on the ME effect.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>магнитоэлектрический эффект</kwd><kwd>магнитоэлектрическая структура</kwd><kwd>карбид кремния</kwd></kwd-group><kwd-group xml:lang="en"><kwd>magnetoelectric effect</kwd><kwd>magnetoelectric structure</kwd><kwd>silicon carbide</kwd></kwd-group><funding-group><funding-statement xml:lang="en">The study was carried out with the financial support of the RFBR grant No. 19-07-00391 A.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Bichurin M.I., Petrov V.M. Srinivasan G. Theory of magnetoelectric effects in ferromagnetic ferroelectric layer composites // J. Appl. Phys. 2002. V.92. №12. Р.7681-7683.</mixed-citation><mixed-citation xml:lang="en">Bichurin M.I., Petrov V.M. Srinivasan G. 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